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an AMP cotn~any Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty 2.856 GHz Features l l l l l l l l PH2856-160 NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic-Metal/Ceramic Package Absolute Maximum Ratings at 25C Parameter Collector-Emitter Voltage Emitter-Base Voltage ] Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature ) Symbol VCES VEBO lr PTOT T, TSTG 1 Rating 65 3.0 15.0 700 200 -65 to +200 I Units V V * W "C "C I .?9'.25) Electrical Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance at 25C Symbol BVCES `Es RTHIJC) PIN GP % RL VSWR-T 7.5 40 6 Min 65 Max 7.5 0.25 28.5 3:l Units V mA "C/W w dB % dB I,=40 mA V,,=36 V V,,=40 V, PO,=1 60 W, F=2.856 GHz V,,=40 V, PO,,=160 W, F=2.856 GHz V,,=40 V, PO,=160 W, F=2.856 GHz V,,=40 V, PO,,=160 W, F=2.856 GHz V,,=40 V, PO& 60 W, F=2.856 GHz Test Conditions V,,=40 V, PO,,=160 W, F=2.856 GHz Test Fixture Impedance F(GHz) 2.856 Z,(Q) 4.4 - j4.9 q,,(n) 4.6-j1.6 TEST GXTURE :N=Vi L YESi FIXTURE 0ur=v7 -i CIRCU!T CIRCUIT --ZOF 5OR -c L - 50R - 21: 3-r Specifications Subject to Change Without Notice. Linear Accelerator Power Transistor, 160W PH2856-160 v2.00 RF Test Fixture BANANA JACK, 2 PLACES PC BOARD, ROGERS 6010.5 2 PLACES --T---T CARBON RESISTOR, 5.1 OHM .25 W ,025' \ ELECTROLYTIC CAPACITOR, 50 uF 50 V MALLORY TTSOMSOA CHIP CAPACITOR JOHANSON TYPE X7R DIELECTRIC .1 UF S41 SMACONNECTOR M/A-COU 2052-5636-02 2 PLACES L CHIP CAPACITOR, 22 pF ATClOOA I LHEATSINK ALUMINUM 73050255-09 ~~f!k;iit?:, COPPER 73050256-02 TDP VIEW i BOARD CARRIER, BRASS 2 PLACES 73050257-13 Test Fixture PC Board Dimensions b $ L200' b 5 .800' "a |
Price & Availability of PH2856-160 |
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