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Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty 2.856 GHz
Features
l l l l l l l l
PH2856-160
NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic-Metal/Ceramic Package
Absolute Maximum Ratings at 25C
Parameter Collector-Emitter Voltage Emitter-Base Voltage ] Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature ) Symbol VCES VEBO lr PTOT T, TSTG 1 Rating 65 3.0 15.0 700 200 -65 to +200 I Units V V * W "C "C I
Electrical Characteristics
Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance
at 25C
Symbol BVCES `Es RTHIJC) PIN GP % RL VSWR-T 7.5 40 6 Min 65 Max 7.5 0.25 28.5 3:l Units V mA "C/W w dB % dB I,=40 mA V,,=36 V V,,=40 V, PO,=1 60 W, F=2.856 GHz V,,=40 V, PO,,=160 W, F=2.856 GHz V,,=40 V, PO,=160 W, F=2.856 GHz V,,=40 V, PO,,=160 W, F=2.856 GHz V,,=40 V, PO& 60 W, F=2.856 GHz Test Conditions
V,,=40 V, PO,,=160 W, F=2.856 GHz
Test Fixture Impedance
F(GHz) 2.856 Z,(Q) 4.4 - j4.9 q,,(n) 4.6-j1.6
TEST
GXTURE :N=Vi L
YESi
FIXTURE 0ur=v7 -i
CIRCU!T
CIRCUIT
--ZOF 5OR -c L -
50R
-
21: 3-r
Specifications Subject to Change Without Notice.
Linear Accelerator Power Transistor, 160W
PH2856-160
v2.00
RF Test Fixture
BANANA JACK, 2 PLACES PC BOARD, ROGERS 6010.5 2 PLACES --T---T CARBON RESISTOR, 5.1 OHM .25 W
,025'
\
ELECTROLYTIC CAPACITOR, 50 uF 50 V MALLORY TTSOMSOA CHIP CAPACITOR JOHANSON TYPE X7R DIELECTRIC .1 UF S41
SMACONNECTOR M/A-COU 2052-5636-02 2 PLACES L CHIP CAPACITOR, 22 pF ATClOOA
I
LHEATSINK ALUMINUM 73050255-09
~~f!k;iit?:, COPPER 73050256-02 TDP VIEW
i
BOARD CARRIER, BRASS 2 PLACES 73050257-13
Test Fixture PC Board Dimensions
b $
L200'
b
5 .800'
"a


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